Contact Information
3217 Bell Engineering
Center
Room 3146
Fayetteville, AR 72701
Email: edecuir@uark.edu
Website:
www.ericdecuirjr.com
Education

  • B.S. Electrical Engineering – Telecom: University of Louisiana at Lafayette (December 2002)
  • M.S. Microelectronics and Photonics: University of Arkansas (May 2005)
  • Ph.D. Microelectronics and Photonics: University of Arkansas (December 2008)

Experience

  • Jan 2008-Present: Research Associate: Univ. of Arkansas, Fayetteville, AR.
  • Fall 2003–Fall 2008: Research Assistant: Univ. of Arkansas, Fayetteville, AR.
  • Summer 2004–Summer 2006: NSF IGERT Fellow: Univ. of Arkansas: Fayetteville, AR.
  • Fall 2003–Spring 2004: NSF GK-12 Fellow: Univ. of Arkansas: Fayetteville, AR.
  • Fall 2002–Spring 2003: Peer Counselor Tutor: Univ. of Louisiana at Lafayette: Lafayette, LA

Current Research
The growth and characterization of III-Nitride materials continues to be a fascinating and challenging endeavor for our research group here at the University of Arkansas. Our research in collaboration with the University of Paderborn, Germany has explored the growth, optical, and electrical properties of Gallium Nitride (GaN)/ Aluminum Nitride (AlN) multiple quantum well (MQW) and superlattice structures from both the cubic and hexagonal phase for their application in near-infrared detectors, specifically at telecommunication wavelengths (1.55 um). The growth of these structures was achieved through the use Plasma Assisted Molecular Beam Epitaxy (PAMBE) utilizing a radio frequency nitrogen plasma source. Observation of interssuband transitions (ISTs) spanning the spectral range of 1.35-2.90 microns has been achieved using a multi-pass optical absorption technique. Through the use of reactive ion etching techniques, fabrication of 1mm x 1mm mesa type devices was made possible, thereby enabling the observation of near-infrared photoconductivity in these superlattice structures. These observations has given insight into the electronic transitions of bound states in the conduction band and is further supported by bound state energy level calculations utilizing a transfer matrix method. Additional capabilities such as Electrochemical Capacitance Voltage (ECV) measurements have allowed verification of activated Si dopants in contact regions and quantum well. Pending developments include the installation of new chlorine based ICP/RIE etching facilities which will extend our capabilities into nitride device fabrication and allow the fabrication of high aspect ratio structures such as photonic crystals.

Goals
Current plans are to continue research on the growth and characterization of Nitride-based structures, possibly extending into quantum dots and quantum cascade laser studies. Immediate goals include continued refinement of nitride growth and device fabrication for near-infrared detectors applications.

Publications

  1. E.A. DeCuir, Jr, M.O. Manasreh, Elena Tschumak, J. Schörmann, D.J. As, and K. Lischka. Cubic GaN/AlN multiple quantum well photodetector Appl. Phys. Lett. 92 201910(2008).
  2. D.J. As, J. Schörmann, Elena Tschumak, K. Lischka. E.A. DeCuir, Jr and M.O. Manasreh. Growth of non-polar cubic GaN/AlN multiple quantum wells with intersubband transitions for 1.5 μm applications. phys. stat. sol.(c) 5 2092-2095 (2008).
  3. Yu. I. Mazur, S. Noda, G.G. Tarasov, V.G. Dorogan, G.J. Salamo, O. Bierwagen, W.T. Masselink, E.A. DeCuir, Jr., M.O. Manasreh. Excitonic band edges and optical anisotropy of InAs/InP quantum dot structures. J. Appl. Phys. v 103, n 5, 1 March 2008, p 054315-1-7.
  4. B.S.Passmore, Jiang Wu; E.A. DeCuir, Jr, M.O. Manasreh, P.M Lytvyn, E. Marega, Jr., V.P. Kunets, G.J.Salamo. Broadband photoresponse from InAs quantum dots embedded in a graded well for visible to mid-infrared detection. Proceedings of the SPIE – The International Society for Optical Engineering, v 6900, 7 Feb. 2008, p 69000O-1-8.
  5. B.L. Liang, Yu. I. Mazur1, Vas. P. Kunets, Zh. M. Wang, G.J. Salamo, E. A. DeCuir Jr, B. Passmore and M. O. Manasreh. Enhanced photoluminescence from InAs/GaAs surface quantum dots by using a Si-doped interlayer. Nanotechnology 19 065705 (2008).
  6. E.A. DeCuir, Jr., Emil Fred, M.O. Manasreh, J. Schörmann, D.J. As, and K. Lischka. Near infrared intersubband absorption in cubic GaN/AlN superlattices. Mater. Res. Soc. Symp. Proc. Vol. 955, 1055-GG13-02 (2008). Accompanying Presentation: 2007 Fall MRS Conference, Boston, MA: Oral Presentation.
  7. E.A. DeCuir, Jr., Emil Fred, M.O. Manasreh, J. Schörmann, D.J. As, and K. Lischka. Near-infrared Intersubband Absorption in non-polar cubic GaN/AlN superlattices Appl. Phys. Lett. 91 041911(2007).
  8. E.A. DeCuir, Jr., Emil Fred, M.O. Manasreh, J. Xie, H. Morkoc, E. Baumann D. Hoffstetter. 1.37-2.90 Intersubband transitions in GaN/AlN superlattices. Mater. Res. Soc. Symp. Proc. Vol. 955, I13-01 (2006). Accompanying Presentation: 2006 Fall MRS Conference, Boston, MA: Oral Presentation.
  9. E.A. DeCuir, Jr., Emil Fred, B.S. Passmore, A. Muddasani, and M.O. Manasreh., M. E. Ware, G.J. Salamo. Near-infrared wavelength intersubband transitions in GaN/AlN short period superlattices., Appl. Phys. Lett 89 151112(2006).
  10. B.L Liang, Zh. M. Wang, Yu. I Mazur, G.J. Salamo, E.A. DeCuir, Jr., M.O. Manasreh. Correlation between surface and buried InAs quantum dots. Appl. Phys. Lett. 89 043125 (2006).
  11. E.A. DeCuir, Jr., Y.C. Chua, B.S. Passmore, J. Liang,, M.O. Manasreh, J. Xie, H. Morkoc, A. Asghar, I.T. Ferguson, and A. Payne. Intersubband transitions in GaN/AlxGa1-xN multi quantum wells Mater. Res. Soc. Symp. Proc. Vol. 829, B2.29 (2005). Accompanying Presentation: 2004 Fall MRS Conference, Boston, MA: Poster Presentation.
  12. Y.C. Chua, E. A. DeCuir, Jr., M. O. Manasreh, B. D. Weaver. Intersubband transitions in proton irradiated InGaAs/GaAs multiple quantum dots. Appl. Phys. Lett. 87 091905(2005).
  13. Y.C. Chua, J. Liang, B.S. Passmore, E.A. DeCuir, Jr., M.O. Manasreh, Z. Wang, and G.J. Salamo. Intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots of varying dot-sizes. Mater. Res. Soc. Symp. Proc.Vol. 829, B1.4 (2005).
  14. Y.C. Chua, E. A. DeCuir Jr., B.S. Passmore, K. H. Sharif, M. O. Manasreh, Z. Wang, and G. J. Salamo, Tuning In0.3Ga0.7As/GaAs multiple quantum dots for long-wavelength infrared detectors. Appl. Phys. Lett. 851003(2004).