Contact Information
3217 Bell Engineering Center
Fayetteville, AR 72701
Email: jiang731@gmail.com
Education
- B.S., Electronic Science and Technology: University of Electronic Science and Technology of China, June 2006
- B.A., English Language: University of Electronic Science and Technology of China, June 2006
- M.S., Electrical Engineering: University of Arkansas, Fayetteville, August 2008
- Ph. D., Electrical Engineering: University of Arkansas, Fayetteville (In Progress)
Appointments
- Principal Investigator: Spectar.us LLC, Fayetteville, AR
- Fall 2008-Present: Doctoral Academy Fellow: University of Arkansas, Fayetteville, AR
- Fall 2006-Present: Research Assistant, Department of Electrical Engineering: University of Arkansas, Fayetteville, AR
- Spring 2004-Spring 2006: Assistant, Department of Student Affairs: University of Electronic Science and Technology of China
Current Research
His current researches focus quantum dot infrared photodetectors or well-known QDIPs. Multiple quantum dots have been grown by Molecular Beam Epitaxy. Atomic force microscope, X-ray diffraction, electrochemical capacitance voltage profiler, FT-IR/Raman, and
FT-IR/photoluminescence have been used to study material properties of quantum dots. FT-IR photoconductivity setups have used to study photoresponse spectra of QDIPs.
InAs and InGaAs quantum dots have mainly been employed to detect light at different wavelength ranges. Also, the detection wavelength has been modified by engineering cap layer, changing compound composition, etc. Interband transitions as well as intersubband transitions have been investigated to achieve broadband multi-color detection. Interband and intersubband photoresponse spanning from visible (~500 nm) to long wavelength infrared (~14 µm) has been observed. Through study of several novel QDIP structures, room temperature infrared detectors with high detectivities have been approached.
Goals
Current research plans is design, fabrication and characterization of high performance multi-color (visible to far infrared) photodetectors based on III-V quantum dots. Photonic crystal coupled detectors and QDIP FPA may be included in his research. Other interests include photovoltaic and thermoelectric devices.
Publications
- Passmore, B. S., Wu, Jiang, DeCuir, Jr., E. A., Manasreh, O., Lytvyn, Marega, Jr., E., P. M., Kunets, V., Salamo, G. J., “Broadband photoresponse from InAs and InGaAs quantum dots in a graded well for mid- and long-wavelength infrared detection,” Proc. SPIE, vol. 6900, 69000O, 2008.
- Passmore, B. S., Wu, Jiang, Kunets, V., Lytvyn, P. M., Salamo, G. J., Manasreh, O., “Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in In0.35Ga0.65As Multiple Quantum Dot Photodetectors,” Electron Device Letters, vol. 29, pp. 224-227, 2008.
- Passmore, B. S., Wu, Jiang, Salamo, G. J., Manasreh, O., “Dual broadband photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells,” Virtual Journal of Nanoscale Science & Technology, vol. 16, Issue 25, December 17, 2007.
- Passmore, B. S., Wu, Jiang, Salamo, G. J., Manasreh, O., “Dual broad-band photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells,” Appl. Phys. Lett., vol. 91, 233508, 2007.
- Passmore, B. S., Wu, Jiang, DeCuir, Jr., E. A., Manasreh, Lytvyn, P. M., O., Kunets, V., Salamo, G., “Multi-color InAs and InGaAs Quantum Dot Photodetectors for Mid and Long-wavelength Infrared Detection,” in Excitons and Plasmon Resonances in Nanostructures, edited by A.O. Govorov, Z.M. Wang, A.L. Rogach, H. Ruda, M. Brongersma, Mater. Res. Soc. Symp. Proc., vol. 1055E, Warrendale, PA, GG02-02, 2007.
- Wu, Jiang, Passmore, B. S., Manasreh, M. O., “Intersubband transitions in quantum well infrared photodetector,” 2007 IEEE Region 5 Technical Conference Proceeding, Fayetteville, AR, April 20-21, 2007.